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Browse "School of Electrical Engineering(전기및전자공학부)" by Author Chim, WK

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Showing results 1 to 8 of 8

1	A MONOS-type flash memory using a high-k HfAlO charge trapping layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.9, pp.198 - 200, 2004-08
2	Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure Cho, Byung Jin; Yue, JMP; Chim, WK; Qin, WH; Chan, DSH; Kim, YB; Jang, SA, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.94 - 94, 1999-07-05
3	Evaluation of SOHOS (polysilicon-oxide-high-K-oxide-silicon) structure for Flash memory device application Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Joo, MS; Ng, TH, International Conference on Materials for Advanced Technologies, pp.19 - 20, 2005-07-03
4	Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04
5	High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Sig, JM; Hau, NT, International Electron Device Meeting (IEDM), December 2004, pp.889 - 892, 2004-12-13
6	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure Yue, JMP; Chim, WK; Cho, Byung Jin; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; et al, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03
7	Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure Chim, WK; Cho, Byung Jin; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01
8	Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07

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