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First-Principles Studies of the Electronic and Dielectric Properties of Si/SiO2/HfO2 Interfaces Park, Yongjin; Kong, Ki-jeong; Chang, Hyunju; Shin, Mincheol, JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.4, pp.041803, 2013-04 |
Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations Shin, Mincheol; Park, Yongjin; Kong, Ki-jeong; Chang, Hyunju, APPLIED PHYSICS LETTERS, v.98, no.17, pp.173501, 2011-04 |
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