Browse "School of Electrical Engineering(전기및전자공학부)" by Author Chang, H.
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| Device characteristics of double-gate MOSFETs with Si-Dielectric interface model from first principle calculations Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheol, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, 2010-06-13 |
| Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheol, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.1109 - 1112, IEEE, 2010-08-17 |
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