Browse "School of Electrical Engineering(전기및전자공학부)" by Author Asano, T
Showing results 1 to 7 of 7
| Electron-Beam Exposure Epitaxy(EBE-epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures Lee, Hee Chul; Asano, T; Ishiwara, H; Furukawa, S, Extended Abstracts 19th Conf. on Solid State Devices and Materials, pp.581 - 584, 1987 |
| Electron-Beam exposure Heteroepitaxial Growth of GaAs/CaF2/Si Structures Lee, Hee Chul; Furukawa, S; Ishiwara, H; Asano, T, Proc. of SPIE symp., pp.139 - 145, 1988 |
| Formation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators Lee, Hee Chul; Asano, T; Ishiwara, H; Tsutsui, K; Furukawa, S, Extended Abstracts 17th Conf. on Solid State Devices and Materials, pp.217 - 220, 1985 |
| Formation of SOI-GaAs on (Ca,Sr)F2/GaAs Structures Lee, Hee Chul; Tsutsui, K; Ishiwara, H; Asano, T; Furukawa, S, Inst. Phys. Conf. Ser, pp.109 - 114, 1985 |
| Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy(EBE-epitaxy) Technique Lee, Hee Chul; Asano, T; ishiwara, H; Furukawa, S, Ext. Abst. 20th Conf. on Solid State Devices and Materials, pp.291 - 294, 1988 |
| Heteroepitaxy of Si, Ge and GaAs Films on CaF2/Si Structures Lee, Hee Chul; Ishiwara, H; Asano, T; Kuriyama, Y; Seki, K; Furuk, S, Mat. Res. Soc. Symp. Proc, pp.105 - 114, 1986 |
| Layered Structures Composed of Si, Ge, GaAs and Fluorides Lee, Hee Chul; Ishiwara, H; Asano, T; Tsutsui, K; Furukawa, S, Mat. Res. Soc. Symp. Proc, pp.241 - 251, 1988 |
Discover
Open Access
- 573 OA Article
Date issued
- 4,885 2020 - 2024
- 18,937 2010 - 2019
- 15,019 2000 - 2009
- 7,644 1990 - 1999
- 2,391 1980 - 1989