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Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer Joh, Hongrae; Jung, Taeseung; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05 |
Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
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