Showing results 8 to 9 of 9
Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers Rieh, J. S.; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, Kyounghoon; Katehi, L. P. B.; Bhattacharya, P.; et al, IEEE Cornell Conf, pp.322 - 331, IEEE, 1997-08-04 |
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05 |
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