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Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11 |
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01 |
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