Showing results 5 to 7 of 7
Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy(EBE-epitaxy) Technique Lee, Hee Chul; Asano, T; ishiwara, H; Furukawa, S, Ext. Abst. 20th Conf. on Solid State Devices and Materials, pp.291 - 294, 1988 |
Heteroepitaxy of Si, Ge and GaAs Films on CaF2/Si Structures Lee, Hee Chul; Ishiwara, H; Asano, T; Kuriyama, Y; Seki, K; Furuk, S, Mat. Res. Soc. Symp. Proc, pp.105 - 114, 1986 |
Layered Structures Composed of Si, Ge, GaAs and Fluorides Lee, Hee Chul; Ishiwara, H; Asano, T; Tsutsui, K; Furukawa, S, Mat. Res. Soc. Symp. Proc, pp.241 - 251, 1988 |
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