Showing results 15 to 23 of 23
First Principles Based NEGF Simulations of Si Nanowire FETs Shin, Mincheol; Jeong, Woo Jin; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices 2016, SISPAD, 2016-09-07 |
First-Principles Study on the Performance of Hafnia-Based Ferroelectric Tunnel Junction with Symmetric Electrodes Seo, Junbeom; Shin, Mincheol, ICAE 2019, ICAE 2019, 2019-11-05 |
Multiscale simulation of Schottky barrier tunnel transistors Shin, Min-Cheol; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09 |
Performance Boost of Si TFETs by Insertion of III-V Dipole Formation Layer: A First Principle Study Lim, Yeongjun; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.6, pp.2956 - 2961, 2023-06 |
Performance investigation of uniaxially strained phosphorene n-MOSFETs Jung, Sungwoo; Seo, Junbeom; Heo, Seonghyun; Shin, Mincheol, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, pp.341 - 344, SISPAD, 2017-09-07 |
Quantum transport simulation study of negative capacitance FETs based on the Landau theory and its applications = Landau 이론 기반 NCFET 소자의 양자 수송 전산모사를 통한 소자 특성 연구와 응용link Seo, Junbeom; 서준범; et al, 한국과학기술원, 2016 |
Quantum transport simulations of the zero temperature coefficient in gate-All-Around nanowire pfets Lee, Hyeongu; Shin, Mincheol; Seo, Junbeom, 24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.117 - 120, Atomera,et al.,GTS,Infineon,Leti - Cea Tech,Samsung, 2019-09-04 |
The Performance of Uniaxially Strained Phosphorene Tunneling Field-Effect Transistors Seo, Junbeom; Jung, Sungwoo; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1150 - 1152, 2017-08 |
Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates Lee, Joon-Ho; Jeong, Woo Jin; Seo, Junbeom; Shin, Mincheol, SOLID-STATE ELECTRONICS, v.139, pp.101 - 108, 2018-01 |
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