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Iridium thin film as a bottom electrode for high dielectric (Ba,Sr)TiO3 capacitors Cha, SY; Jang, BT; Kwak, DH; Shin, CH; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.17, no.1-4, pp.187 - 195, 1997 |
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 |
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