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Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications Yoon, Giwan; Epstein, Y, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.5, pp.1679 - 1683, 1998-05 |
Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure Yoon, Giwan; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04 |
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