Showing results 1 to 6 of 6
Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Oh, Seungyeol; Kim, Taeho; Kwak, Myunghoon; Song, Jeonghwan; Woo, Jiyong; Jeon, Sanghun; Yoo, In Kyeong; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.6, pp.732 - 735, 2017-06 |
In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed TiOx Jung, Seungjae; Kong, Jaemin; Kim, Tae-Wook; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; et al, IEEE ELECTRON DEVICE LETTERS, v.33, no.6, pp.869 - 871, 2012-06 |
Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147, 2011-07 |
Resistive Switching Characteristics of Solution-Processed Transparent TiO(x) for Nonvolatile Memory Application Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.11, pp.H1042 - H1045, 2010-09 |
Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse I-d-V-g Chang, Man; Jo, Minseok; Jung, Seungjae; Lee, Joonmyoung; Jeon, Sanghun; Hwang, Hyunsang, APPLIED PHYSICS LETTERS, v.94, no.26, 2009-06 |
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