Showing results 1 to 6 of 6
Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress Kim, Hyunjin; Kim, Beom Jung; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.39, no.2, 2024-02 |
Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 |
Fast and slow transient charging of Oxide Semiconductor Transistors Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09 |
Inter-channel interference in multispan WDM transmissions around perfect dispersion-compensated region Chen, J; Kim, Hoon; Chung, Yun Chur, OPTICS COMMUNICATIONS, v.213, no.4-6, pp.367 - 371, 2002-12 |
Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy Lee, Sungsik; Nathan, Arokia; Jeon, Sanghun; Robertson, John, SCIENTIFIC REPORTS, v.5, 2015-10 |
Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
Discover