Showing results 1 to 3 of 3
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03 |
Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11 |
P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08 |
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