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Boron profile narrowing in laser-processed silicon after rapid thermal anneal Poon, CH; Tan, LS; Cho, Byung Jin; See, A; Bhat, M, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.1, pp.80 - 83, 2004-01 |
Dopant loss mechanism in n(+)/p germanium junctions during rapid thermal annealing Poon, CH; Tan, LS; Cho, Byung Jin; Du, AY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.12, pp.895 - 899, 2005-10 |
Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation Poon, CH; Cho, Byung Jin; Lu, YF; Bhat, M; See, A, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.2, pp.706 - 709, 2003-02 |
Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; et al, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05 |
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