Showing results 12 to 14 of 14
The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances Kim, Jeong-Kyu; Kim, Gwang-Sik; Nam, Hyohyun; Shin, Changhwan; Park, Jin-Hong; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1185 - 1187, 2014-12 |
The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08 |
The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10 |
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