Showing results 2 to 9 of 9
Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device Seo, Jung Won; Baik, Seung Jae; Kang, Sang Jung; Hong, Yun Ho; Yang, Ji-Hwan; Fang, Liang; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
Performance improvement of pin-type amorphous silicon solar cells with wide bandgap materials = 큰 밴드갭 물질을 이용한 pin 타입의 비정질 실리콘 태양전지 성능 향상link Fang, Liang; 방량; et al, 한국과학기술원, 2011 |
Photocurrent increase in amorphous Si solar cells by increased reflectivity of LiF/Al electrodes Lanz, T.; Fang, Liang; Baik, S. J.; Lim, Koeng-Su; Ruhstaller, B., SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.107, pp.259 - 262, 2012-12 |
Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide Park, Sang-Il; Baik, Seung-Jae; Im, Jong-San; Fang, Liang; Jeon, Jin-Wan; Lim, Koeng-Su, APPLIED PHYSICS LETTERS, v.99, no.6, pp.063504, 2011-08 |
Transition metal oxide window layer in thin film amorphous silicon solar cells Fang, Liang; Baik, Seung Jae; Lim, Koeng Su, THIN SOLID FILMS, v.556, pp.515 - 519, 2014-04 |
Transparent flexible resistive random access memory fabricated at room temperature Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Kang, Sang-Jung; Hong, Yun-Ho; Yang, Ji-Hwan; Fang, Liang; et al, APPLIED PHYSICS LETTERS, v.95, no.13, pp.133508, 2009-10 |
Tunable work function of a WO(x) buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells Fang, Liang; Baik, Seung-Jae; Kim, Jeong-Won; Kang, Sang-Jung; Seo, Jung-Won; Jeon, Jin-Wan; Kim, Yoon-Hak; et al, JOURNAL OF APPLIED PHYSICS, v.109, no.10, pp.104501, 2011-05 |
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05 |
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