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NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications Kim, M.-S.; Jang, W.W.; Lee, J.-M.; Kim, S.-M.; Yun, E.-J.; Cho, K.-H.; Lee, S.-Y.; et al, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007-12-12 |
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