Showing results 86 to 98 of 98
Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design Song, Y.; Yang, Kyounghoon, 14th Indium Phosphide and Related Materials Conference, pp.165 - 168, IEEE, 2002-05-12 |
Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress Kim, D; Yoon, M; Kim, T; Yang, Kyounghoon, IEEE, International Symposium on Compound Semiconductors, pp.231 - 232, IEEE, 2003 |
Reset Level Boosting in Self-Adaptive APS for Wide Output Voltage Swing at Low Voltage Operation Lee, J; Cho, C; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.280 - 281, 2008 |
Reset level Boosting in Self-adaptive CMOS Active Pixel Sensor for a Wide Output Voltage Swing at Low Voltage Operation Lee, J; Cho, Ch; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.54 - 55, 2009 |
Resonant tunneling diode based QMOS edge triggered flip-flop design Zhang, H.; Mazumder, P.; Yang, Kyounghoon, 2004 IEEE International Symposium on Cirquits and Systems - Proceedings, v.3, pp.705 - 708, IEEE, 2004-05-23 |
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05 |
Suppression of Random Offset Deviation in a Rail-to-Rail Buffer Amplifier for Display Driver ICs Under Transistor Threshold Mismatch Song,Y; 양경훈, Korean Conference on Semiconductors, pp.77 - 78, 2006 |
The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors J. C. Cowles,; Yang, Kyounghoon; A. Guiterrez-Aitken; Munns, G. O.; Chen, W. L.; Haddad, G. I.; Bhattacharya, P. K., Int. Semicond. Device Research Symp., pp.787 - 790, 1993 |
Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications Yang, J.G.; Choi, S.; Jeong, Y.; Yang, Kyounghoon, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, pp.133 - 136, 2007-05-14 |
Theoretical and experimental study on thermal characteristics of InP/InGaAs single heterojunction bipolar transistors Kim, Taeho; Song,Y; Park, HM; Kim, M; Hong, Songcheol; Yang, Kyounghoon, 2001 Int. Conf. On Solid State Devices and Materials, pp.70 - 71, 2001 |
Wireless RF Emission of Low-power Quantum Tunneling-diode Wave Generator Integrated with a microstructure Antenna Kim, Maengkyu; Lee, Jooseok; Baek, Inkyu; Lee, Jongwon; Park, Jaehong; Yang, Kyounghoon, The 11th Nano Korea 2012, Nano Korea, 2012-08 |
다층구조의 마이크로스트립 라인을 이용한 새로운 저 면적 3차원 하이브리드 커플러 양정길; 정용식; 최선규; 양경훈, 2006 Fall Conference, Korea Institute of Military Science & Technology, pp.158 - 161, 2006 |
새로운 Inner Field-plate 구조를 이용한 고전력 AlGaN/GaN HEMTs의 향상된 DC와 RF 성능 이기원; 고광의; 이성식; 양경훈, 2006, Fall Conference, Korea Institute of Military Science & Technology, pp.155 - 157, 2006 |
Discover