Showing results 4 to 9 of 9
A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHz Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Bhattacharya, P.; Haddad, G. I., International Symposium on Compound Semiconductors, pp.1097 - 1102, 1995 |
A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays Syao, K. C.; A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Electron Devices Meeting (IEDM'96), pp.649 - 652, IEEE, 1996-12-08 |
InP-BASE:D GILBERT CELL PHASE DETECTOR FOR GENERATION OF STABLE DENSE WAVELENGTH DIVISION MULTIPLEXING CHANNEL OFFSETS USING AN OPTICAL PHASE-LOCKED LOOP Goetz, P. G.; Eisele, H.; Syao, K. C.; Yang, Kyounghoon; Bhattacharya, P., IEEE MTT-S Int. Microwave Symposium, pp.1245 - 1248, IEEE, 1998-06-07 |
Large bandwidth InP-based monolithically integrated PIN-HBT photoreceivers for optical communications A. L. Gutierrez-Aitken; Bhattacharya, P.; Cowles, J.; Yang, Kyounghoon; Haddad, G. I., Conference on Manufacturing Process Development in Photonics, pp.197 - 203, 1994-11-01 |
Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers Rieh, J. S.; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, Kyounghoon; Katehi, L. P. B.; Bhattacharya, P.; et al, IEEE Cornell Conf, pp.322 - 331, IEEE, 1997-08-04 |
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05 |
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