Bias stress effect in graphene field-effect transistors based on passivation layer

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 286
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorPark, Haminko
dc.contributor.authorPark, Ick-Joonko
dc.contributor.authorHa, Young-Wookko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2015-07-21T04:09:43Z-
dc.date.available2015-07-21T04:09:43Z-
dc.date.created2015-06-30-
dc.date.created2015-06-30-
dc.date.issued2015-07-03-
dc.identifier.citationNANO KOREA 2015-
dc.identifier.urihttp://hdl.handle.net/10203/199649-
dc.languageEnglish-
dc.publisher나노기술연구협의회-
dc.titleBias stress effect in graphene field-effect transistors based on passivation layer-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNANO KOREA 2015-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation서울(Coex)-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorPark, Hamin-
dc.contributor.nonIdAuthorPark, Ick-Joon-
dc.contributor.nonIdAuthorHa, Young-Wook-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0