DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jeong Soo | ko |
dc.contributor.author | Lee, Yong-Hee | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2010-11-15T07:40:04Z | - |
dc.date.available | 2010-11-15T07:40:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.275, no.3-4, pp.448 - 454 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/19947 | - |
dc.description.abstract | We propose a novel epitaxial growth method, named as bridged mask growth (BMG), where the epitaxial growth characteristics under the bridged mask is different from that outside the BMG area. The growth rate under the bridged mask can be controlled by changing the bridge width, the opening gap width between neighboring bridges, and the thickness of spacer layer. The transition of growth characteristics between the BMG area and its outside region is confined in a very short distance. We find the relation of bridge pattern dimensions with spacer thickness for good surface morphology. (c) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | INPLANE THICKNESS CONTROL | - |
dc.subject | SELECTIVE-AREA GROWTH | - |
dc.subject | SILICON SHADOW MASK | - |
dc.subject | LASER-DIODES | - |
dc.subject | LAYER | - |
dc.subject | MOVPE | - |
dc.title | Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000228116800011 | - |
dc.identifier.scopusid | 2-s2.0-14844347859 | - |
dc.type.rims | ART | - |
dc.citation.volume | 275 | - |
dc.citation.issue | 3-4 | - |
dc.citation.beginningpage | 448 | - |
dc.citation.endingpage | 454 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2004.12.025 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Yong-Hee | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Kim, Jeong Soo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | crystal morphology | - |
dc.subject.keywordAuthor | growth models | - |
dc.subject.keywordAuthor | organometallic vapor phase epitaxy | - |
dc.subject.keywordAuthor | selective epitaxy | - |
dc.subject.keywordAuthor | bridged mask growth | - |
dc.subject.keywordAuthor | phosphides | - |
dc.subject.keywordPlus | INPLANE THICKNESS CONTROL | - |
dc.subject.keywordPlus | SELECTIVE-AREA GROWTH | - |
dc.subject.keywordPlus | SILICON SHADOW MASK | - |
dc.subject.keywordPlus | LASER-DIODES | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | MOVPE | - |
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