Fabrication of polycrystalline Si films by silicide-enhanced rapid thermal annealing and their application to thin film transisto다결정 Si 박막의 제조 및 다결정 Si 박막 트랜지스터에의 응용

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dc.contributor.authorKim, Jone Soo-
dc.contributor.authorMun, Seonhong-
dc.contributor.authorYang, Yong-Ho-
dc.contributor.authorKang, Seung-Mo-
dc.contributor.authorAhn, Byung-Tae-
dc.date.accessioned2015-06-24T02:22:43Z-
dc.date.available2015-06-24T02:22:43Z-
dc.date.created2015-06-11-
dc.date.issued2014-01-
dc.identifier.citationKOREAN JOURNAL OF MATERIALS RESEARCH, v.24, no.9, pp.443 - 450-
dc.identifier.issn1225-0562-
dc.identifier.urihttp://hdl.handle.net/10203/198999-
dc.description.abstractAmorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicideenhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a NiCl2 environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at 200 °C. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at 730 °C for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of NiSi2 precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to 1 × 10 cm. The maximum fieldeffect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were 85 cm/V·s and 1.23 V/decade at Vds = -3 V, respectively. The off current was little increased under reverse bias from 1.0 × 10 A. Our results showed that the SERTA process is a promising technology for high quality poly- Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.-
dc.languageENG-
dc.publisherMaterials Research Society of Korea-
dc.titleFabrication of polycrystalline Si films by silicide-enhanced rapid thermal annealing and their application to thin film transisto-
dc.title.alternative다결정 Si 박막의 제조 및 다결정 Si 박막 트랜지스터에의 응용-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-84908615131-
dc.type.rimsART-
dc.citation.volume24-
dc.citation.issue9-
dc.citation.beginningpage443-
dc.citation.endingpage450-
dc.citation.publicationnameKOREAN JOURNAL OF MATERIALS RESEARCH-
dc.identifier.doi10.3740/MRSK.2014.24.9.443-
dc.contributor.localauthorMun, Seonhong-
dc.contributor.localauthorYang, Yong-Ho-
dc.contributor.localauthorKang, Seung-Mo-
dc.contributor.localauthorAhn, Byung-Tae-
dc.contributor.nonIdAuthorKim, Jone Soo-
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