Improved Electromigration-Resistance of Cu Interconnects by Graphene-Based Capping Layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, Seong Jun | ko |
| dc.contributor.author | Yoon, Alexander | ko |
| dc.contributor.author | Hwang, Wan Sik | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.contributor.author | Cho, Byung-Jin | ko |
| dc.date.accessioned | 2015-06-03T06:02:56Z | - |
| dc.date.available | 2015-06-03T06:02:56Z | - |
| dc.date.created | 2015-05-26 | - |
| dc.date.created | 2015-05-26 | - |
| dc.date.created | 2015-05-26 | - |
| dc.date.created | 2015-05-26 | - |
| dc.date.issued | 2015-06-15 | - |
| dc.identifier.citation | 2015 Symposium on VLSI Technology | - |
| dc.identifier.uri | http://hdl.handle.net/10203/198659 | - |
| dc.language | English | - |
| dc.publisher | 2015 Symposium on VLSI Technology | - |
| dc.title | Improved Electromigration-Resistance of Cu Interconnects by Graphene-Based Capping Layer | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000370559200083 | - |
| dc.identifier.scopusid | 2-s2.0-84950979565 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2015 Symposium on VLSI Technology | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | RIHGA Royal Hotel Kyoto | - |
| dc.contributor.localauthor | Cho, Byung-Jin | - |
| dc.contributor.nonIdAuthor | Yoon, Seong Jun | - |
| dc.contributor.nonIdAuthor | Yoon, Alexander | - |
| dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
| dc.contributor.nonIdAuthor | Choi, Sung-Yool | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 1 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.