DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Jinsu | ko |
dc.contributor.author | Lee, Dongil | ko |
dc.contributor.author | Kim, Chaewon | ko |
dc.contributor.author | Lee, Jieun | ko |
dc.contributor.author | Choi, Bongsik | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Lee, Mijung | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.date.accessioned | 2015-05-22T02:29:35Z | - |
dc.date.available | 2015-05-22T02:29:35Z | - |
dc.date.created | 2014-11-25 | - |
dc.date.created | 2014-11-25 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.105, no.21, pp.212103 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/198592 | - |
dc.description.abstract | The mobility of single-walled carbon nanotube (SWNT) network thin-film transistors (TFTs) is an essential parameter. Previous extraction methods for mobility encountered problems in extracting accurate intrinsic mobility due to the uncertainty of the SWNT density in the network channel and the existence of contact resistance at the source/drain electrodes. As a result, efficient and accurate extraction of the mobility in SWNT TFTs is challenging using previous methods. We propose a direct method of extracting accurate intrinsic mobility in SWNT TFTs by employing capacitance-voltage and current-voltage measurements. Consequently, we simply obtain accurate intrinsic mobility within the ink-jet printed SWNT TFTs without any complicated calculations. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | P-N DIODES | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | INTEGRATED-CIRCUITS | - |
dc.subject | ELECTRONICS | - |
dc.subject | SENSORS | - |
dc.subject | INKS | - |
dc.title | Accurate extraction of mobility in carbon nanotube network transistors using C-V and I-V measurements | - |
dc.type | Article | - |
dc.identifier.wosid | 000345639400018 | - |
dc.identifier.scopusid | 2-s2.0-84912142415 | - |
dc.type.rims | ART | - |
dc.citation.volume | 105 | - |
dc.citation.issue | 21 | - |
dc.citation.beginningpage | 212103 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4902834 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Yoon, Jinsu | - |
dc.contributor.nonIdAuthor | Kim, Chaewon | - |
dc.contributor.nonIdAuthor | Lee, Jieun | - |
dc.contributor.nonIdAuthor | Choi, Bongsik | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Lee, Mijung | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | P-N DIODES | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | INKS | - |
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