The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition

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The influence of various Cu lattices on the texturing of graphene domains during low-pressure chemical vapor deposition was investigated in a large area. The results show that the sizes and shapes of graphene domains grown on Cu(111) substrates match well with those of the underlying Cu(111) domains, which seem to be quasi-single-crystalline. In contrast, on other Cu substrates such as (100) and more intermediate domains, graphene islands with poly-domains (ca. 85%) are significantly nucleated, eventually merging into polycrystalline graphene. Within the overall channel-length range, graphene from a Cu foil shows a higher resistance compared to graphene from a Cu(111) domain, with the extracted average channel resistances being 34.51 m(-1) for Cu(111) and 66.17 m(-1) for the Cu foil.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2015-04
Language
English
Article Type
Article
Keywords

SINGLE-LAYER GRAPHENE; POLYCRYSTALLINE GRAPHENE; GRAIN-BOUNDARIES; HIGH-QUALITY; COPPER FOIL; GROWTH; FILMS; ORIENTATION; TRANSPORT; CRYSTALS

Citation

CHEMPHYSCHEM, v.16, no.6, pp.1165 - 1171

ISSN
1439-4235
DOI
10.1002/cphc.201402633
URI
http://hdl.handle.net/10203/198572
Appears in Collection
CBE-Journal Papers(저널논문)
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