학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ vii, 56 p. ]
전력반도체; breakdown; 4H-SiC VDMOSFET; nomally-off; AlGaN/GaN HEMT; SiC; 질화갈륨; 탄화규소; 알루미늄질화갈륨/질화갈륨 고전자이동도트랜지스터; 상시불통형; 4H-탄화규소 수직구조이중확산형금속산화물반도체전계효과트랜지스터; 항복현상; power device; GaN
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