DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Yoo, Seung-Hyup | - |
dc.contributor.advisor | 유승협 | - |
dc.contributor.advisor | Lim, Koeng-Su | - |
dc.contributor.advisor | 임굉수 | - |
dc.contributor.author | Kang, Sang-Jung | - |
dc.contributor.author | 강상정 | - |
dc.date.accessioned | 2015-04-23T06:12:28Z | - |
dc.date.available | 2015-04-23T06:12:28Z | - |
dc.date.issued | 2014 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=568565&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/196529 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ x,114 p. ] | - |
dc.description.abstract | This thesis focuses on amorphous silicon (a-Si) solar cell which is deposited at low temperature around 130°C to use cheap substrate such as polyimide, polyethylene terephthalate, polyethylene naphthalate and polycarbonate. Due to the low doping efficiency of low deposition temperature, a-Si solar cell which is depos-ited at low temperature shows low fill factor and low conversion efficiency. This thesis, also, focuses on per-formance improvement to achieve high conversion efficiency. In order to achieve this object, very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system was introduced instead of PECVD and solar cell was fabricated by using that PECVD and VHF-PECVD. With VHF-PECVD system, the thinner plasma sheaths and the lower RF-voltage directly related to the sheath potential can be obtained. Due to this, higher electron densities and better SiH4 dissocia-tion in the bulk plasma, as well as increased radical and ion flux onto the growing surface, can be achieved. A consequence of all this is a net increase in the deposition rate and the film quality especially at low tempera-ture. Also, tungsten oxide (WOx) film was developed and solar cell was fabricated by using that film. Using the WOx film as a buffer layer at the interface of n-a-Si/ZnO is a new approach to make amorphous silicon based thin film solar cell because all these methods which improve the solar cell efficiency are concerning the front-side, that is, window-side structures. WOx buffer layer have advantages compared to conventional amorphous silicon (a-Si:H) solar cell which has no WOx buffer layer . Firstly, the optical band gap of the WOx film is 3.35 eV. This wide optical band gap property is very useful for not only a window layer of a-Si solar cells but also a buffer layer of a-Si solar cells. WOx films pro-vides high transparency, which leads to open the way of the window layer and buffer layer. Secondly, the resistance of the materials determines the series r... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | low temperature solar cell | - |
dc.subject | defect density | - |
dc.subject | contact resistance | - |
dc.subject | 텅스텐 옥사이드 | - |
dc.subject | 비정질 실리콘 태양전지 | - |
dc.subject | 낮은 온도에서 증착된 태양전지 | - |
dc.subject | 결함 밀도 | - |
dc.subject | 접촉 저항 | - |
dc.subject | tungsten oxide | - |
dc.subject | amorphous silicon solar cell | - |
dc.title | Development of amorphous silicon solar cell fabricated at low temperature and its performance enhancement using tungsten oxide buffer layer | - |
dc.title.alternative | 저온 증착 비정질 실리콘 태양전지의 개발 및 산화 텅스텐 완충층을 이용한 특성 향상 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 568565/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
dc.identifier.uid | 020085001 | - |
dc.contributor.localauthor | Yoo, Seung-Hyup | - |
dc.contributor.localauthor | 유승협 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.contributor.localauthor | 임굉수 | - |
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