DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Chang, Kee-Joo | - |
dc.contributor.advisor | 장기주 | - |
dc.contributor.author | Lee, Chang-Hwi | - |
dc.contributor.author | 이창휘 | - |
dc.date.accessioned | 2015-04-21T08:32:00Z | - |
dc.date.available | 2015-04-21T08:32:00Z | - |
dc.date.issued | 2014 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=568876&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/196114 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2014.2, [ iv, 18 p. ] | - |
dc.description.abstract | The semiconductor technology roadmap shows Si-based complementary metal-oxide semiconductor technology will reach absolute limits on its performance by around 2020. To enhance the performance of metal-oxide-semiconductor field-effect transistors without changing the scaling trend, much attention has been paid to devices utilizing SiGe alloys due to high hole mobility. While B is commonly used as a p-type dopant, it easily segregates to the oxide in Si/SiO$_2$ interface during ion implantation followed by thermal annealing. On the other hand, there is a lack of studies for the segregation behavior of B dopants in SiGe/SiO$_2$ interface. In this work, we generate the atomic model for SiGe/SiO$_2$ interface, in which $\alpha$-quartz SiO$_2$ is placed on the (100) surface of Si$_{0.75}$Ge$_{0.25}$. The SiGe alloy is generated by using the special quasi-random structure approach. We examine the stability of various B-related defects in the SiGe/SiO$_2$ interface. Similar to the results in Si/SiO$_2$ interface, an interstitial B in SiO$_2$ is more stable than a defect complex consisting of a substitutional B and Si self-interstitial in SiGe. However, in contrast to Si/SiO$_2$ interface, interface Ge atoms significantly enhance the stability of B-related defects in the interface region and thereby increase the migration barrier for B diffusion from SiGe to SiO$_2$. The calculated migration barrier is about 3.6 eV, which is much higher than the result for Si/SiO$_2$ interface, indicating that the B diffusion is suppressed in the presence of Ge at the interface. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | First-principles | - |
dc.subject | 계면 | - |
dc.subject | 결함 | - |
dc.subject | 도펀트 | - |
dc.subject | 전계효과트랜지스터 | - |
dc.subject | 밀도범함수이론 | - |
dc.subject | density functional theory | - |
dc.subject | MOSFET | - |
dc.subject | dopant | - |
dc.subject | defect | - |
dc.subject | interface | - |
dc.subject | 제일원리 | - |
dc.title | First-principles study on the mechanism for boron diffusion at SiGe/SiO$_2$ interfaces. | - |
dc.title.alternative | 제일원리 계산을 통한 규소게르마늄-규소산화물 계면에서의 붕소 확산 메카니즘 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 568876/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020123552 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.localauthor | 장기주 | - |
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