Unipolar resistive switching memory using graphene oxide for flexible one diode-one resistor (1D-1R) cell array

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dc.contributor.authorKoo, Beom Junko
dc.contributor.authorKim, Jong Yunko
dc.contributor.authorJang, Byung Chulko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2015-04-08-
dc.date.available2015-04-08-
dc.date.created2015-03-17-
dc.date.created2015-03-17-
dc.date.issued2015-03-10-
dc.identifier.citationGraphene 2015-
dc.identifier.urihttp://hdl.handle.net/10203/195376-
dc.languageEnglish-
dc.publisherGraphene 2015-
dc.titleUnipolar resistive switching memory using graphene oxide for flexible one diode-one resistor (1D-1R) cell array-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameGraphene 2015-
dc.identifier.conferencecountrySP-
dc.identifier.conferencelocationBilbao Exhibition Centre-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorKoo, Beom Jun-
dc.contributor.nonIdAuthorKim, Jong Yun-
dc.contributor.nonIdAuthorJang, Byung Chul-
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EE-Conference Papers(학술회의논문)
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