DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Ji Hun | ko |
dc.contributor.author | Kim, Tae Kyun | ko |
dc.contributor.author | Moon, Jung Min | ko |
dc.contributor.author | Yoon, Young Gwang | ko |
dc.contributor.author | Hwang, Byeong Woon | ko |
dc.contributor.author | Kim, Dong Hyun | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.date.accessioned | 2015-04-07T02:40:55Z | - |
dc.date.available | 2015-04-07T02:40:55Z | - |
dc.date.created | 2014-12-29 | - |
dc.date.created | 2014-12-29 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1182 - 1184 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/195112 | - |
dc.description.abstract | In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-kappa gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L-G extension caused by the fringing field through high-kappa gate spacers. The OFF-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-kappa gate spacers. The high-kappa gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSISTOR | - |
dc.title | Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers | - |
dc.type | Article | - |
dc.identifier.wosid | 000345575400007 | - |
dc.identifier.scopusid | 2-s2.0-84913535137 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1182 | - |
dc.citation.endingpage | 1184 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2014.2364093 | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.nonIdAuthor | Moon, Jung Min | - |
dc.contributor.nonIdAuthor | Kim, Dong Hyun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Fringing field | - |
dc.subject.keywordAuthor | high-kappa gate spacers | - |
dc.subject.keywordAuthor | JAM FET | - |
dc.subject.keywordAuthor | junctionless (JL) FET | - |
dc.subject.keywordPlus | TRANSISTOR | - |
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