DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Jinheui | ko |
dc.contributor.author | Park, Joonbum | ko |
dc.contributor.author | Kwon, Sangku | ko |
dc.contributor.author | Kim, Jun Sung | ko |
dc.contributor.author | Park, JeongYoung | ko |
dc.date.accessioned | 2015-04-06T05:50:18Z | - |
dc.date.available | 2015-04-06T05:50:18Z | - |
dc.date.created | 2014-12-09 | - |
dc.date.created | 2014-12-09 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | SURFACE SCIENCE, v.630, pp.153 - 157 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.uri | http://hdl.handle.net/10203/194707 | - |
dc.description.abstract | We investigated the effect of surface oxides on charge transport properties in a topological insulator (Bi2Te2Se) using conductive probe atomic force microscopy in an ultrahigh vacuum environment. Uniform distribution of the measured friction and current were observed over a single quintuple layer terrace after exposure to the ambient environment, which is an indication of uniform surface oxide coverage. An oxide-free topological insulator surface was exposed using tip-induced etching. By comparing surface conduction on a fresh surface versus a surface exposed to air, we observed a minor change in resistance when surface oxide was present. The current density varied with applied load on the oxidized surface, which implies that the topological surface states respond to tip-induced pressure even though surface oxide is present. From these results, we conclude that surface oxidation in air has a negligible effect on surface conductance in topological insulators. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | DECAGONAL QUASI-CRYSTALS | - |
dc.subject | ATOMIC-FORCE MICROSCOPY | - |
dc.subject | FRICTION | - |
dc.subject | BI2SE3 | - |
dc.subject | TRANSPORT | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | DEFORMATIONS | - |
dc.subject | ADHESION | - |
dc.subject | CONTACT | - |
dc.subject | STATES | - |
dc.title | Role of oxidation on surface conductance of the topological insulator Bi2Te2Se | - |
dc.type | Article | - |
dc.identifier.wosid | 000344435900020 | - |
dc.identifier.scopusid | 2-s2.0-84907851751 | - |
dc.type.rims | ART | - |
dc.citation.volume | 630 | - |
dc.citation.beginningpage | 153 | - |
dc.citation.endingpage | 157 | - |
dc.citation.publicationname | SURFACE SCIENCE | - |
dc.identifier.doi | 10.1016/j.susc.2014.08.005 | - |
dc.contributor.localauthor | Park, JeongYoung | - |
dc.contributor.nonIdAuthor | Park, Joonbum | - |
dc.contributor.nonIdAuthor | Kim, Jun Sung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Topological insulators | - |
dc.subject.keywordAuthor | Bismuth compounds | - |
dc.subject.keywordAuthor | Surface oxidation | - |
dc.subject.keywordAuthor | Transport | - |
dc.subject.keywordAuthor | Friction | - |
dc.subject.keywordAuthor | Atomic force microscopy | - |
dc.subject.keywordPlus | DECAGONAL QUASI-CRYSTALS | - |
dc.subject.keywordPlus | ATOMIC-FORCE MICROSCOPY | - |
dc.subject.keywordPlus | FRICTION | - |
dc.subject.keywordPlus | BI2SE3 | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | DEFORMATIONS | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | STATES | - |
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