Tuning the Schottky barrier height at silicide/silicon interfaces: An ab-initio study

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dc.contributor.authorPooja Srivastavako
dc.contributor.authorShin, Min-Cheolko
dc.contributor.authorLee, Kwang-Ryeolko
dc.contributor.authorKim, SC.ko
dc.date.accessioned2015-03-30T01:34:37Z-
dc.date.available2015-03-30T01:34:37Z-
dc.date.created2015-01-15-
dc.date.issued2014-11-18-
dc.identifier.citationENGE 2014-
dc.identifier.urihttp://hdl.handle.net/10203/194588-
dc.languageEnglish-
dc.publisherENGE 2014-
dc.titleTuning the Schottky barrier height at silicide/silicon interfaces: An ab-initio study-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameENGE 2014-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationRamada Plaza Jeju Hotel-
dc.contributor.localauthorShin, Min-Cheol-
dc.contributor.nonIdAuthorPooja Srivastava-
dc.contributor.nonIdAuthorLee, Kwang-Ryeol-
dc.contributor.nonIdAuthorKim, SC.-
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EE-Conference Papers(학술회의논문)
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