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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Multi-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport

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dc.contributor.authorKim, Byung-Hyun-
dc.contributor.authorKim, Seungchul-
dc.contributor.authorJung, Hyo Eun-
dc.contributor.authorChung, YongChae-
dc.contributor.authorShin, Min-Cheol-
dc.contributor.authorLee, Kwang-Ryeol-
dc.date.accessioned2015-03-30T01:29:02Z-
dc.date.available2015-03-30T01:29:02Z-
dc.date.created2015-01-16-
dc.date.issued2015-01-09-
dc.identifier.citationThe 9th International Conference on Computational Physcics, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/194567-
dc.languageENG-
dc.publisherICCP-9-
dc.titleMulti-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 9th International Conference on Computational Physcics-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorJung, Hyo Eun-
dc.contributor.localauthorShin, Min-Cheol-
dc.contributor.nonIdAuthorKim, Byung-Hyun-
dc.contributor.nonIdAuthorKim, Seungchul-
dc.contributor.nonIdAuthorChung, YongChae-
dc.contributor.nonIdAuthorLee, Kwang-Ryeol-
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EE-Conference Papers(학술회의논문)
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