Determination of Accurate Transistion Levels of Charged Defects in Silicon Nanowire
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sung-Hyun | ko |
| dc.contributor.author | Park, Ji-Sang | ko |
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.date.accessioned | 2015-03-27T05:46:08Z | - |
| dc.date.available | 2015-03-27T05:46:08Z | - |
| dc.date.created | 2015-01-06 | - |
| dc.date.issued | 2014-08 | - |
| dc.identifier.citation | 32nd International Conference on the Physics of Semiconductors | - |
| dc.identifier.uri | http://hdl.handle.net/10203/194300 | - |
| dc.language | English | - |
| dc.publisher | ICPS | - |
| dc.title | Determination of Accurate Transistion Levels of Charged Defects in Silicon Nanowire | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 32nd International Conference on the Physics of Semiconductors | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Austin Convention Center, Austin, TX | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.