First-principles calculations toward understanding dopant segregation and Schottky barrier formation at semiconductor-oxide and metal-oxide interfaces in CMOS devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.date.accessioned | 2015-03-27T05:45:25Z | - |
| dc.date.available | 2015-03-27T05:45:25Z | - |
| dc.date.created | 2015-01-06 | - |
| dc.date.issued | 2014-08 | - |
| dc.identifier.citation | The IUMRS International Conference in Asia 2014 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/194295 | - |
| dc.language | English | - |
| dc.publisher | IUMRS | - |
| dc.title | First-principles calculations toward understanding dopant segregation and Schottky barrier formation at semiconductor-oxide and metal-oxide interfaces in CMOS devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The IUMRS International Conference in Asia 2014 | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | Fukuoka University | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
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