Synthesis and Characterization of N-doped Graphene on SiC Substrate by Pulsed Laser Annealing

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dc.contributor.authorPark, jung hwanko
dc.contributor.authorChoi, Insungko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorLee, Keonjaeko
dc.date.accessioned2015-01-29T04:58:12Z-
dc.date.available2015-01-29T04:58:12Z-
dc.date.created2014-12-17-
dc.date.issued2014-11-18-
dc.identifier.citationENGE 2014-
dc.identifier.urihttp://hdl.handle.net/10203/193220-
dc.languageEnglish-
dc.publisherThe Korean Institute of Metals and Materials-
dc.titleSynthesis and Characterization of N-doped Graphene on SiC Substrate by Pulsed Laser Annealing-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameENGE 2014-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationRamada Plaza Jeju Hotel-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorLee, Keonjae-
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EE-Conference Papers(학술회의논문)MS-Conference Papers(학술회의논문)
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