DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Suck-Min | ko |
dc.contributor.author | Kwack, Ho-Sang | ko |
dc.contributor.author | Park, Chung-Hyun | ko |
dc.contributor.author | Yoo, Yang Seok | ko |
dc.contributor.author | Kwon, Soon-Yong | ko |
dc.contributor.author | Kim, Hee Jin | ko |
dc.contributor.author | Yoon, Euijoon | ko |
dc.contributor.author | Dang, Le Si | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2014-12-09T01:41:52Z | - |
dc.date.available | 2014-12-09T01:41:52Z | - |
dc.date.created | 2013-12-27 | - |
dc.date.created | 2013-12-27 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/192463 | - |
dc.description.abstract | Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | EMITTING-DIODES | - |
dc.title | Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission | - |
dc.type | Article | - |
dc.identifier.wosid | 000327696300035 | - |
dc.identifier.scopusid | 2-s2.0-84888591380 | - |
dc.type.rims | ART | - |
dc.citation.volume | 103 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 222104 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4833917 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kwack, Ho-Sang | - |
dc.contributor.nonIdAuthor | Kwon, Soon-Yong | - |
dc.contributor.nonIdAuthor | Kim, Hee Jin | - |
dc.contributor.nonIdAuthor | Yoon, Euijoon | - |
dc.contributor.nonIdAuthor | Dang, Le Si | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EMITTING-DIODES | - |
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