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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

HIGH-SPEED GA0.51IN0.49P/GAAS HETEROJUNCTION PHOTOTRANSISTORS

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dc.contributor.authorHA, KHko
dc.contributor.authorLee, Yong-Heeko
dc.contributor.authorSONG, JIko
dc.contributor.authorCANEAU, Cko
dc.contributor.authorPARK, CYko
dc.contributor.authorPARK, KHko
dc.date.accessioned2010-09-06T06:51:56Z-
dc.date.available2010-09-06T06:51:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-08-
dc.identifier.citationELECTRONICS LETTERS, v.31, no.16, pp.1386 - 1387-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/19223-
dc.description.abstractA high speed Ga0.51In0.49P/GaAs heterojunction phototransistor grown by metal organic vapour phase epitaxy (MOVPE) is reported. High frequency measurements indicate that the device has a cutoff frequency of 1.7 GHz with a 50 Omega output load. The impulse response of the device is measured to be similar to 60 ps full width at half maximum (FWHM). The phototransistor exhibits an external AC gain of 29 at an incident powter of 500 mu W.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.subjectGAAS BASE-
dc.subjectEMITTER-
dc.titleHIGH-SPEED GA0.51IN0.49P/GAAS HETEROJUNCTION PHOTOTRANSISTORS-
dc.typeArticle-
dc.identifier.wosidA1995RP21700060-
dc.identifier.scopusid2-s2.0-0029634630-
dc.type.rimsART-
dc.citation.volume31-
dc.citation.issue16-
dc.citation.beginningpage1386-
dc.citation.endingpage1387-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorHA, KH-
dc.contributor.nonIdAuthorSONG, JI-
dc.contributor.nonIdAuthorCANEAU, C-
dc.contributor.nonIdAuthorPARK, CY-
dc.contributor.nonIdAuthorPARK, KH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorPHOTOTRANSISTORS-
dc.subject.keywordAuthorHETEROJUNCTION BIPOLAR TRANSISTORS-
dc.subject.keywordPlusGAAS BASE-
dc.subject.keywordPlusEMITTER-
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