Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최호원 | - |
| dc.contributor.author | 이재현 | - |
| dc.contributor.author | 이여름 | - |
| dc.contributor.author | 신민철 | - |
| dc.date.accessioned | 2014-12-08T08:33:51Z | - |
| dc.date.available | 2014-12-08T08:33:51Z | - |
| dc.date.created | 2014-10-02 | - |
| dc.date.issued | 2014-02-25 | - |
| dc.identifier.citation | 제21회 한국반도체학술대회, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/191659 | - |
| dc.language | KOR | - |
| dc.publisher | 한국반도체학술대회 | - |
| dc.title | Simulation of III-V UTB SB-MOSFETs using tight-binding band-structure calculations | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제21회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 이재현 | - |
| dc.contributor.localauthor | 신민철 | - |
| dc.contributor.nonIdAuthor | 최호원 | - |
| dc.contributor.nonIdAuthor | 이여름 | - |
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