Transparent, low resistance and work function tunable gate electrode for indium-gallium-zinc oxide thin film transistors

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dc.contributor.authorJang, Woo Jaeko
dc.contributor.authorYang, Dae Youngko
dc.contributor.authorKim, Eung-taekko
dc.contributor.authorPark, Jun-hongko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorChoi, Kyung Cheolko
dc.date.accessioned2014-12-08T08:21:40Z-
dc.date.available2014-12-08T08:21:40Z-
dc.date.created2014-10-02-
dc.date.issued2014-08-27-
dc.identifier.citationThe 14th International Meeting on Information Display, IMID 2014-
dc.identifier.urihttp://hdl.handle.net/10203/191412-
dc.languageEnglish-
dc.publisherThe 14th International Meeting on Information Display, IMID 2014-
dc.titleTransparent, low resistance and work function tunable gate electrode for indium-gallium-zinc oxide thin film transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 14th International Meeting on Information Display, IMID 2014-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationEXCO, Daegu-
dc.contributor.localauthorChoi, Kyung Cheol-
dc.contributor.nonIdAuthorJang, Woo Jae-
dc.contributor.nonIdAuthorYang, Dae Young-
dc.contributor.nonIdAuthorKim, Eung-taek-
dc.contributor.nonIdAuthorPark, Jun-hong-
dc.contributor.nonIdAuthorPark, Sang-Hee Ko-
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EE-Conference Papers(학술회의논문)
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