DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Jang, HyunJae | ko |
dc.contributor.author | Kim, Chang-Hoon | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Choi, Ji-Min | ko |
dc.contributor.author | Lee, Dong-Il | ko |
dc.contributor.author | Kim, Min-Wu | ko |
dc.contributor.author | Yoon, Jun-Bo | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2014-09-02T02:36:44Z | - |
dc.date.available | 2014-09-02T02:36:44Z | - |
dc.date.created | 2014-06-26 | - |
dc.date.created | 2014-06-26 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.citation | NANOSCALE, v.6, no.14, pp.7799 - 7804 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/10203/189877 | - |
dc.description.abstract | A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal-oxide-semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | PULL-IN | - |
dc.subject | CASIMIR FORCE | - |
dc.subject | SWITCHES | - |
dc.subject | SILICON | - |
dc.subject | OXIDE | - |
dc.subject | MEMS | - |
dc.subject | INTEGRATION | - |
dc.subject | MV/DEC | - |
dc.title | A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling | - |
dc.type | Article | - |
dc.identifier.wosid | 000338638900010 | - |
dc.identifier.scopusid | 2-s2.0-84903647749 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 14 | - |
dc.citation.beginningpage | 7799 | - |
dc.citation.endingpage | 7804 | - |
dc.citation.publicationname | NANOSCALE | - |
dc.identifier.doi | 10.1039/c3nr06251a | - |
dc.contributor.localauthor | Yoon, Jun-Bo | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jang, HyunJae | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PULL-IN | - |
dc.subject.keywordPlus | CASIMIR FORCE | - |
dc.subject.keywordPlus | SWITCHES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | MEMS | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | MV/DEC | - |
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