DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jongwon | ko |
dc.contributor.author | Lee, Jooseok | ko |
dc.contributor.author | Yang, Kyounghoon | ko |
dc.date.accessioned | 2014-09-02T02:33:48Z | - |
dc.date.available | 2014-09-02T02:33:48Z | - |
dc.date.created | 2014-06-26 | - |
dc.date.created | 2014-06-26 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.551 - 553 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/189845 | - |
dc.description.abstract | This letter presents a resonant tunneling diode (RTD)-based microwave amplifier operating at deep sub-milliwatt level dc-power. The fabricated amplifier, which is based on a reflection-type amplifying topology and uses an InP monolithic microwave integrated circuit technology, shows extremely low dc-power consumption of 125 mu W with a gain of more than 10 dB at 5.7 GHz. The amplifier performance is mainly enabled by the favorable characteristics of the 0.9 - mu m InP-based RTDs biased at V-BIAS = 0.36V. The RTDs exhibit a high peak-to-valley current ratio (PVCR) of 11.2 with a low peak current (I-P) of 430 mu A and thereby a relatively low negative resistance magnitude of 480 Omega. The dc-power consumption is about 6.4 times lower than that in transistor-based low-power amplifiers reported to date for the 5 GHz frequency band. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MMIC APPLICATIONS | - |
dc.subject | HETEROSTRUCTURE | - |
dc.subject | CIRCUITS | - |
dc.subject | DIODE | - |
dc.title | Reflection-Type RTD Low-Power Amplifier With Deep Sub-mW DC Power Consumption | - |
dc.type | Article | - |
dc.identifier.wosid | 000341983800015 | - |
dc.identifier.scopusid | 2-s2.0-84905674973 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 551 | - |
dc.citation.endingpage | 553 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2014.2322751 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MMIC amplifiers | - |
dc.subject.keywordAuthor | negative resistance circuits | - |
dc.subject.keywordAuthor | quantum effect semiconductor devices | - |
dc.subject.keywordAuthor | resonant tunneling diodes (RTDs) | - |
dc.subject.keywordPlus | MMIC APPLICATIONS | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DIODE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.