DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Won Chul | ko |
dc.contributor.author | Lee, Jaehyun | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2014-09-02 | - |
dc.date.available | 2014-09-02 | - |
dc.date.created | 2013-11-22 | - |
dc.date.created | 2013-11-22 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/189707 | - |
dc.description.abstract | We investigate the performance of Ge and Si channel p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-pMOSFETs) based on rigorous quantum mechanical calculations. The multiband k . p method and the nonequilibrium Green's function are used. We find that Ge SB-pMOSFETs show superior performance in terms of ON-state current (I-ON), subthreshold swing, and the equivalent oxide thickness scaling. In particular, I-ON of Ge SB-pMOSFETs is estimated to become about 2.5 times larger than that of Si SB-pMOSFET if the possibility of achieving low Schottky barrier height (SBH) in Ge-channel devices is taken into account. As the channel width is scaled down to a few nanometers, however, the differences in device performance become smaller. This is explained by the increase of the tunneling effective mass due to the heavy-light hole coupling effect and the effectively increased SBH due to the size quantization effect. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DOPANT SEGREGATION | - |
dc.subject | SOURCE/DRAIN | - |
dc.subject | PERFORMANCE | - |
dc.subject | GATE | - |
dc.subject | GERMANIUM | - |
dc.subject | BODY | - |
dc.subject | SIMULATION | - |
dc.subject | CONTACTS | - |
dc.subject | SILICON | - |
dc.title | p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000330619100006 | - |
dc.identifier.scopusid | 2-s2.0-84891558352 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 37 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2013.2292008 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Germanium | - |
dc.subject.keywordAuthor | hole transport | - |
dc.subject.keywordAuthor | k . p method | - |
dc.subject.keywordAuthor | nonequilibrium Green&apos | - |
dc.subject.keywordAuthor | s function (NEGF) | - |
dc.subject.keywordAuthor | p-type MOSFETs | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DOPANT SEGREGATION | - |
dc.subject.keywordPlus | SOURCE/DRAIN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | BODY | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | SILICON | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.