DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Seokmin | ko |
dc.contributor.author | Bosco, Jeffrey P. | ko |
dc.contributor.author | Wilson, Samantha S. | ko |
dc.contributor.author | Rozeveld, Steve J. | ko |
dc.contributor.author | Kim, Hyungjun | ko |
dc.contributor.author | Atwater, Harry A. | ko |
dc.date.accessioned | 2014-09-01T08:40:07Z | - |
dc.date.available | 2014-09-01T08:40:07Z | - |
dc.date.created | 2014-07-29 | - |
dc.date.created | 2014-07-29 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, v.118, no.24, pp.12717 - 12726 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10203/189651 | - |
dc.description.abstract | The growth of epitaxial Zn3P2 films on III-V substrates unlocks a promising pathway toward high-efficiency, earth-abundant photovoltaic devices fabricated on reusable, single-crystal templates. The detailed chemical, structural, and electronic properties of the surface and interface of pseudomorphic Zn3P2 epilayers grown on GaAs(001) were investigated using scanning tunneling microscopy/spectroscopy and high-resolution X-ray photoelectron spectroscopy. Two interesting features of the growth process were observed: (1) vapor-phase P-4 first reacts with the Ga-rich GaAs surface to form an interfacial GaP layer with a thickness of several monolayers, and (2) a P-rich amorphous overlayer is present during the entire film growth process, beneath which a highly ordered Zn3P2 crystalline phase is precipitated. These features were corroborated by transmission electron micrographs of the Zn3P2/GaAs interface as well as density functional theory calculations of P reactions with the GaAs surface. Finally, the valence-band offset between the crystalline Zn3P2 epilayer and the GaAs substrate was determined to be Delta E-V = 1.0 +/- 0.1 eV, indicating the formation of a hole-depletion layer at the substrate surface which may inhibit formation of an ohmic contact. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | THIN-FILMS | - |
dc.subject | ZINC PHOSPHIDE | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ATOMIC-STRUCTURE | - |
dc.subject | DEPOSITION | - |
dc.subject | GAP(001) | - |
dc.title | Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface | - |
dc.type | Article | - |
dc.identifier.wosid | 000337783900017 | - |
dc.identifier.scopusid | 2-s2.0-84903136361 | - |
dc.type.rims | ART | - |
dc.citation.volume | 118 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 12717 | - |
dc.citation.endingpage | 12726 | - |
dc.citation.publicationname | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.identifier.doi | 10.1021/jp4127804 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Hyungjun | - |
dc.contributor.nonIdAuthor | Jeon, Seokmin | - |
dc.contributor.nonIdAuthor | Bosco, Jeffrey P. | - |
dc.contributor.nonIdAuthor | Wilson, Samantha S. | - |
dc.contributor.nonIdAuthor | Rozeveld, Steve J. | - |
dc.contributor.nonIdAuthor | Atwater, Harry A. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ZINC PHOSPHIDE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ATOMIC-STRUCTURE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GAP(001) | - |
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