DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Young Gwang | ko |
dc.contributor.author | Kim, Tae Kyun | ko |
dc.contributor.author | Hwang, In-Chan | ko |
dc.contributor.author | Lee, Hyun-Seung | ko |
dc.contributor.author | Hwang, Byeong Woon | ko |
dc.contributor.author | Moon, Jung-Min | ko |
dc.contributor.author | Seo, Yu Jin | ko |
dc.contributor.author | Lee, Suk Won | ko |
dc.contributor.author | Jo, Moon-Ho | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.date.accessioned | 2014-08-29T01:54:47Z | - |
dc.date.available | 2014-08-29T01:54:47Z | - |
dc.date.created | 2014-04-22 | - |
dc.date.created | 2014-04-22 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/188891 | - |
dc.description.abstract | In this study, germanium nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited enhanced electrical performance with low source/drain (S/D) contact resistance under the influence of Ar plasma treatment on the contact regions. We found that the transformation of the surface oxide states by Ar plasma treatment affected the S/D contact resistance. With Ar plasma treatment, the germanium dioxide on the GeNW surface was effectively removed and increased oxygen vacancies were formed in the suboxide on the GeNW, whose germanium-enrichment surface was obtained to form a germanide contact at low temperature. After a rapid thermal annealing process, Ni-germanide contacts were formed on the Ar-plasma-treated GeNW surface. Ni-germanide contact resistance was improved by more than an order of magnitude compared to that of the other devices without Ni-germanide contact. Moreover, the peak field effect mobility value of the GeNW-JL MOSFETs was dramatically improved from 15 cm(2)/(V s) to 550 cm(2)/(V s), and the I-on/off ratio was enhanced from 1 x 10 to 3 x 10(3) due to Ar plasma treatment. The Ar plasma treatment process is essential for forming uniform Ni-germanide-contacts with reduced time and low temperature. It is also crucial for increasing mass productivity and lowering the thermal budget without sacrificing the performance of GeNW-JL MOSFETs. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | ENERGY-LOSS SPECTROSCOPY | - |
dc.subject | LIQUID-SOLID GROWTH | - |
dc.subject | THERMAL-DESORPTION | - |
dc.subject | SILICON | - |
dc.subject | OXIDE | - |
dc.subject | SURFACE | - |
dc.subject | SUBSTRATE | - |
dc.subject | TRANSISTORS | - |
dc.subject | FUTURE | - |
dc.subject | LAYERS | - |
dc.title | Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.wosid | 000332922900014 | - |
dc.identifier.scopusid | 2-s2.0-84896338630 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3150 | - |
dc.citation.endingpage | 3155 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/am403971x | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.nonIdAuthor | Hwang, In-Chan | - |
dc.contributor.nonIdAuthor | Lee, Hyun-Seung | - |
dc.contributor.nonIdAuthor | Moon, Jung-Min | - |
dc.contributor.nonIdAuthor | Lee, Suk Won | - |
dc.contributor.nonIdAuthor | Jo, Moon-Ho | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GeNW-JL | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordAuthor | Ar plasma treatment | - |
dc.subject.keywordAuthor | GeO2 | - |
dc.subject.keywordAuthor | suboxide | - |
dc.subject.keywordAuthor | germanide contact | - |
dc.subject.keywordPlus | ENERGY-LOSS SPECTROSCOPY | - |
dc.subject.keywordPlus | LIQUID-SOLID GROWTH | - |
dc.subject.keywordPlus | THERMAL-DESORPTION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordPlus | LAYERS | - |
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