Lithography-free high-resolution organic transistor arrays on polymer substrate by low energy selective laser ablation of inkjet-printed nanoparticle film

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dc.contributor.authorKo, Seung Hwanko
dc.contributor.authorPan, Hengko
dc.contributor.authorGrigoropoulos, Costas P.ko
dc.contributor.authorFrechet, Jean M. J.ko
dc.contributor.authorLuscombe, Christine K.ko
dc.contributor.authorPoulikakos, Dimosko
dc.date.accessioned2010-06-15T19:47:38Z-
dc.date.available2010-06-15T19:47:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-08-
dc.identifier.citationAPPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.92, no.3, pp.579 - 587-
dc.identifier.issn0947-8396-
dc.identifier.urihttp://hdl.handle.net/10203/18879-
dc.description.abstractInkjet direct writing of functional materials provides a promising pathway towards realization of ultra-low-cost, large-area printed electronics, albeit at the expense of lowered resolution (similar to 20-50 mu m). We demonstrate that selective laser sintering and ablation of inkjet-printed metal nanoparticles enables low-temperature metal deposition as well as high-resolution patterning. Combined with an air-stable carboxylate-functionalized polythiophene, all-inkjet-printed and laser-processed organic field effect transistors with micron to submicron critical feature resolution were fabricated in a fully maskless sequence, eliminating the need for any lithographic processes. All processing and characterization steps were carried out at plastic-compatible low temperatures and in air under ambient pressure.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherSPRINGER-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectGOLD NANOPARTICLES-
dc.subjectTEMPERATURE-
dc.subjectPERFORMANCE-
dc.subjectELECTRONICS-
dc.subjectCIRCUITS-
dc.subjectIRRADIATION-
dc.subjectFABRICATION-
dc.subjectCONTACTS-
dc.subjectSIZE-
dc.titleLithography-free high-resolution organic transistor arrays on polymer substrate by low energy selective laser ablation of inkjet-printed nanoparticle film-
dc.typeArticle-
dc.identifier.wosid000257912000022-
dc.identifier.scopusid2-s2.0-48349112314-
dc.type.rimsART-
dc.citation.volume92-
dc.citation.issue3-
dc.citation.beginningpage579-
dc.citation.endingpage587-
dc.citation.publicationnameAPPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING-
dc.identifier.doi10.1007/s00339-008-4597-9-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKo, Seung Hwan-
dc.contributor.nonIdAuthorPan, Heng-
dc.contributor.nonIdAuthorGrigoropoulos, Costas P.-
dc.contributor.nonIdAuthorFrechet, Jean M. J.-
dc.contributor.nonIdAuthorLuscombe, Christine K.-
dc.contributor.nonIdAuthorPoulikakos, Dimos-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusGOLD NANOPARTICLES-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusIRRADIATION-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusSIZE-
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