Simulation study of ballistic hole current in p-type Germanium nanowire MOSFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jung, Ju Young | - |
| dc.contributor.author | Shin, Mincheol | - |
| dc.date.accessioned | 2014-08-28T06:17:44Z | - |
| dc.date.available | 2014-08-28T06:17:44Z | - |
| dc.date.created | 2013-10-11 | - |
| dc.date.issued | 2013-07-10 | - |
| dc.identifier.citation | NANO KOREA 2013, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/188040 | - |
| dc.language | ENG | - |
| dc.publisher | NANO KOREA | - |
| dc.title | Simulation study of ballistic hole current in p-type Germanium nanowire MOSFETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | NANO KOREA 2013 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Jung, Ju Young | - |
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