Annealing behavior of hydrogen-plasma-induced n-type HgCdTe

Abstract

In this letter, the effect of annealing in plasma-induced-type converted HgCdTe was observed. The Hg deficient annealing process reconverts the type converted n-HgCdTe into p-type. The activation energy of the process was determined to be 0.99eV regardless to the gas species used for the type conversion process. However, the absorption edge moved toward short-wave direction for hydrogen-plasma-treated sample. The absorption edge shift was observed even after the annealing process, which means the passivation and junction formation are separate phenomena. (c) 2005 American Institute of Physics.