Annealing behavior of hydrogen-plasma-induced n-type HgCdTe

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In this letter, the effect of annealing in plasma-induced-type converted HgCdTe was observed. The Hg deficient annealing process reconverts the type converted n-HgCdTe into p-type. The activation energy of the process was determined to be 0.99eV regardless to the gas species used for the type conversion process. However, the absorption edge moved toward short-wave direction for hydrogen-plasma-treated sample. The absorption edge shift was observed even after the annealing process, which means the passivation and junction formation are separate phenomena. (c) 2005 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2005-09
Language
English
Article Type
Article
Keywords

CONVERSION; HG0.8CD0.2TE; DIODES; FILMS

Citation

APPLIED PHYSICS LETTERS, v.87, pp.370 - 381

ISSN
0003-6951
DOI
10.1063/1.2043239
URI
http://hdl.handle.net/10203/18300
Appears in Collection
EE-Journal Papers(저널논문)
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