Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAs

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 340
  • Download : 549
Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n-doped G&U were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conriIlction-bartd minimum, the PR spectra revealed the band-gap energy as well as the energy E,,, at which the electron concentration per unit energy in the donor band becomes maximum, and this mnsimum was observed to merge in the conduction-band at about 3X lOI cm -3 electron concentration.
Publisher
American Institute of Physics
Issue Date
1995-06-15
Citation

Journal of Applied Physics, Vol.77, No.12, pp.6727-6729

ISSN
0021-8979
URI
http://hdl.handle.net/10203/18297
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
04_C.Lee_JAP_(1995).pdf(363.19 kB)Download

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0